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Reference number: TER-THz-Generator

IMPATT diodes are high-power sub-THz radiation sources.

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Simon
Kempf

Sales Engineer

+49 8153 405-18

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Dr. Stefan
Kremser

Head of Sales

+49 8153 405-16

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Marco
Weisser

Technical Sales & Development Engineer

+49 8153 405-52

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Description

TER-THz Terahertz generators

- IMPATT technology

- 100 GHz and 140 GHz available frequencies

- High power output

- Protective isolator for enhanced stability

- Compact size

- 1 year warranty

TeraSense series of IMPATT diodes are silicon double drift diodes with a 0.6 um transit region, mounted on copper heat sink. The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped pregion, a moderately doped n-region, and a heavily doped (n+)-region. The (p+) — and (n+) — regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain an oscillation.

Terasense is now offering its upgraded version of IMPATT diode. The upgraded IMPATT diode is outfitted with a protective isolator, which significantly improves output power stability. From now on you can order IMPATT diode with either rigidly fixed horn antenna or WR- flange of your choice. Typical output rfpower of IMPATT diode with optimized frequency @ 100 GHz can reach up to 80 mW.

IMPATT 100 GHz

~ 80 mW output rfpower
Conical horn antenna / Flange type output
Protective Isolator
TTL Modulation

IMPATT diode 140 GHz

~ 30 mW output rfpower
Conical horn antenna / Flange type output
Protective Isolator
TTL Modulation

Demonstration of THz generators: https://www.youtube.com/watch?v=VLqAWWTNmX0&feature=youtu.be